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Model nûmer.: NSO4GU3AB
Transport: Ocean,Air,Express,Land
Betel wize: L/C,T/T,D/A
Incoterm: FOB,EXW,CIF
4GB 1600MHz 240-Pin Ddr3 Udimm
Ferzje skiednis
Revision No. |
History |
Draft Date |
Remark |
1.0 |
Initial Release |
Apr. 2022 |
|
Ynformaasje tafel bestelle
Model |
Density |
Speed |
Organization |
Component Composition |
NS04GU3AB |
4GB |
1600MHz |
512Mx64bit |
DDR3 256Mx8 *16 |
Beskriuwing
Hengstar unbuffered DDR3 SDRAM DIMMS (unbufferde Dûbele gegevens taryf DOINCHRONUS DIM DIDUAL IN-LINE MEIDY FERGESE EARMAGE ISRINE WERKE MEINTIONSOGNEN MOOREGOPTIONS DAT DDR3 SDRAM-apparaten brûke. NS04VU3AB is in 512m X 64-bit twa-rang 4GB DDR3-1600 CL11 1.5V SDRAM Unbuiende Dimm Produkt, basearre op sechstjin 256m X 8-bit fbga-komponinten. De SPD is programmearre nei Jedlec Standert Laty DDR3-1600 TIMING FAN 11-11-11 AT 1.5V. Elke 240-PIN Dimm brûkt Gouden kontaktpersoanen. De SDRAM unbufferde dimm is bedoeld foar gebrûk as haadgeheugen by ynstalleare by ynstalleare yn systemen lykas PC's en wurkstasjons.
Funksjes
Power Supplances: VDD = 1,5v (1.425v nei 1.575V)
vddq = 1,5v (1,425V nei 1.575V)
800mhz FCK foar 1600MB / SEC / PIN
8 Unôfhinklike ynterne bank
programma's CAS LATENCY: 11, 10, 9, 8, 7, 6
programmerable tafoegjend latency: 0, CL - 2, OF of CL - 1 klok
8-bit foarôf
BURST Lengte: 8 (Interleave sûnder limyt, sekwinsjoneel mei begjinadres "000" allinich), 4 mei TCCD = 4 dy't naadleaze lês of skriuwe [op 'e flecht mei A12 of Mrs]
Ębi-directional differinsjele gegevens strobe
internal (Sels) kalibraasje; Ynterne Self-kalibraasje fia ZQ PIN (RZQ: 240 ohm ± 1%)
ons Die Beëiniging mei ODT PIN
Refferjeperioade 7,8us op legere dan Tase dan Tase 85 ° C, 3,9U's om 85 ° C <Tase <95 ° C
asynchronous reset
ADADUNDABLE DATA-OUSPUP DRIVE SKROLD
fly-by topology
pcb: hichte 1.18 "(30mm)
rohs foldwaan en halogen-frij
Key Timing Parameters
MT/s |
tRCD(ns) |
tRP(ns) |
tRC(ns) |
CL-tRCD-tRP |
DDR3-1600 |
13.125 |
13.125 |
48.125 |
2011/11/11 |
Adres Tabel
Configuration |
Refresh count |
Row address |
Device bank address |
Device configuration |
Column Address |
Module rank address |
4GB |
8K |
32K A[14:0] |
8 BA[2:0] |
2Gb (256 Meg x 8) |
1K A[9:0] |
2 S#[1:0] |
Pin beskriuwingen
Symbol |
Type |
Description |
Ax |
Input |
Address inputs: Provide the row address for ACTIVE commands, and the column |
BAx |
Input |
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or |
CKx, |
Input |
Clock: Differential clock inputs. All control, command, and address input signals are |
CKEx |
Input |
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry |
DMx |
Input |
Data mask (x8 devices only): DM is an input mask signal for write data. Input data is |
ODTx |
Input |
On-die termination: Enables (registered HIGH) and disables (registered LOW) |
Par_In |
Input |
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. |
RAS#, |
Input |
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being |
RESET# |
Input |
Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and |
Sx# |
Input |
Chip select: Enables (registered LOW) and disables (registered HIGH) the command |
SAx |
Input |
Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address |
SCL |
Input |
Serial |
CBx |
I/O |
Check bits: Used for system error detection and correction. |
DQx |
I/O |
Data input/output: Bidirectional data bus. |
DQSx, |
I/O |
Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; |
SDA |
I/O |
Serial |
TDQSx, |
Output |
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD |
Err_Out# |
Output (open |
Parity error output: Parity error found on the command and address bus. |
EVENT# |
Output (open |
Temperature event: The EVENT# pin is asserted by the temperature sensor when critical |
VDD |
Supply |
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The |
VDDSPD |
Supply |
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. |
VREFCA |
Supply |
Reference voltage: Control, command, and address VDD/2. |
VREFDQ |
Supply |
Reference voltage: DQ, DM VDD/2. |
VSS |
Supply |
Ground. |
VTT |
Supply |
Termination voltage: Used for control, command, and address VDD/2. |
NC |
– |
No connect: These pins are not connected on the module. |
NF |
– |
No function: These pins are connected within the module, but provide no functionality. |
OPMERKINGEN : DE HJIR PIN BESKRIJVE TABLOCHT HJIR IS EIN WURFFIER FAN ALLE MUSLE PIN FOAR ALLE DDR3 MODULES. Alle Pins fermeld maaie net stipe wurde op dizze module. Sjoch PIN-opdrachten foar ynformaasje spesifyk foar dizze module.
Funksjoneel blokdiagram
4GB, 512MX64 Module (2rank fan X8)
Module-ôfmjittings
Foaroansicht
Foaroansicht
Notysjes:
1. Alle ôfmjittings binne yn Millimeter (inch); Maks / min as typysk (typ) wêr't opmurken is.
2..Solerance op alle dimensjes ± 0,15mm, útsein as oars oantsjutte.
3.De dimensional-diagram is allinich foar referinsje.
Produktkategorien : Industrial Smart Module Accessoires
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Folje mear ynformaasje yn sadat kin yn kontakt komme mei jo rapper
Privacy-ferklearring: Jo privacy is heul wichtich foar ús. Us bedriuw belooft net om jo persoanlike ynformaasje te iepenbierjen oan elke eksplisytrjochten út.