Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeProductsIndustrial Smart Module AccessoiresDDR3 Udimm-ûnthâld module spesifikaasjes

DDR3 Udimm-ûnthâld module spesifikaasjes

Betel wize:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Oarder:
1 Piece/Pieces
Transport:
Ocean,Air,Express,Land
  • produkt Omskriuwing
Overview
Produktattributen

Model nûmer.NSO4GU3AB

Foarsjenningsfeardigens en oanfoljende y...

TransportOcean,Air,Express,Land

Betel wizeL/C,T/T,D/A

IncotermFOB,EXW,CIF

Ferpakking en levering
Units ferkeapje:
Piece/Pieces

4GB 1600MHz 240-Pin Ddr3 Udimm


Ferzje skiednis

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Ynformaasje tafel bestelle

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Beskriuwing
Hengstar unbuffered DDR3 SDRAM DIMMS (unbufferde Dûbele gegevens taryf DOINCHRONUS DIM DIDUAL IN-LINE MEIDY FERGESE EARMAGE ISRINE WERKE MEINTIONSOGNEN MOOREGOPTIONS DAT DDR3 SDRAM-apparaten brûke. NS04VU3AB is in 512m X 64-bit twa-rang 4GB DDR3-1600 CL11 1.5V SDRAM Unbuiende Dimm Produkt, basearre op sechstjin 256m X 8-bit fbga-komponinten. De SPD is programmearre nei Jedlec Standert Laty DDR3-1600 TIMING FAN 11-11-11 AT 1.5V. Elke 240-PIN Dimm brûkt Gouden kontaktpersoanen. De SDRAM unbufferde dimm is bedoeld foar gebrûk as haadgeheugen by ynstalleare by ynstalleare yn systemen lykas PC's en wurkstasjons.


Funksjes
Power Supplances: VDD = 1,5v (1.425v nei 1.575V)
vddq = 1,5v (1,425V nei 1.575V)
800mhz FCK foar 1600MB / SEC / PIN
8 Unôfhinklike ynterne bank
programma's CAS LATENCY: 11, 10, 9, 8, 7, 6
programmerable tafoegjend latency: 0, CL - 2, OF of CL - 1 klok
8-bit foarôf
BURST Lengte: 8 (Interleave sûnder limyt, sekwinsjoneel mei begjinadres "000" allinich), 4 mei TCCD = 4 dy't naadleaze lês of skriuwe [op 'e flecht mei A12 of Mrs]
Ębi-directional differinsjele gegevens strobe
internal (Sels) kalibraasje; Ynterne Self-kalibraasje fia ZQ PIN (RZQ: 240 ohm ± 1%)
ons Die Beëiniging mei ODT PIN
 Refferjeperioade 7,8us op legere dan Tase dan Tase 85 ° C, 3,9U's om 85 ° C <Tase <95 ° C
asynchronous reset
ADADUNDABLE DATA-OUSPUP DRIVE SKROLD
fly-by topology
pcb: hichte 1.18 "(30mm)
rohs foldwaan en halogen-frij


Key Timing Parameters

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Adres Tabel

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Pin beskriuwingen

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

OPMERKINGEN : DE HJIR PIN BESKRIJVE TABLOCHT HJIR IS EIN WURFFIER FAN ALLE MUSLE PIN FOAR ALLE DDR3 MODULES. Alle Pins fermeld maaie net stipe wurde op dizze module. Sjoch PIN-opdrachten foar ynformaasje spesifyk foar dizze module.


Funksjoneel blokdiagram

4GB, 512MX64 Module (2rank fan X8)

1


2


Noat:
1.De Zq Ball op elke DDR3-komponint is ferbûn oan in eksterne 240ΩΩ ± 1% wjerstân dat is bûn oan 'e grûn. It wurdt brûkt foar de kalibraasje fan 'e komponint fan' e komponint's oan 'e DIER-beëiniging en útfierbestjoerder.



Module-ôfmjittings


Foaroansicht

3

Foaroansicht

4

Notysjes:
1. Alle ôfmjittings binne yn Millimeter (inch); Maks / min as typysk (typ) wêr't opmurken is.
2..Solerance op alle dimensjes ± 0,15mm, útsein as oars oantsjutte.
3.De dimensional-diagram is allinich foar referinsje.

Produktkategorien : Industrial Smart Module Accessoires

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HomeProductsIndustrial Smart Module AccessoiresDDR3 Udimm-ûnthâld module spesifikaasjes
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